Form factor | 2.5″ |
Memory size | 500 ГБ |
Type of memory cells | V-NAND MLC |
Interface | SATA III |
NVME | Without NVMe protocol support |
Controller | Samsung MJX |
Reading speed | 550 |
Recording speed | 500 |
Recording resource (TBW) | 300 |
Time -leaning time for refusal | 1.5 млн |
Shock resistance | 1500 |
Power consumption | 4 W |
Working temperature | От 0 до 70 |
Additionally |
Samsung 512 MB Low Power DDR4 SDRAM GC (Garbage Collection) Technology Support WWN Support AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 Random Read (4K, QD32): up to 98,000 IOPS Random read (4 KB, QD1): up to 10,000 IOPS Random write (4 KB, QD32): up to 90,000 IOPS Random write (4 KB, QD1): up to 42,000 IOPS |
Dimensions | 100 x 69.85 x 6.8 |
The weight | 50 |
Equipment | SSD drive |
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